? 2006 ixys all rights reserved ds99441e(01/06) polarhv tm hiperfet power mosfet v dss = 600 v i d25 =36a r ds(on) 105 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 3 ma 600 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = i t , note 1 105 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 150 a i ar t c = 25 c64a e ar t c = 25 c80mj e as t c = 25 c 3.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, 1 minute 2500 v~ t l 1.6 mm (0.062 in.) from case for 10 s 300 c f c mounting force 22..130/5..29 n/lb weight isoplus247 5 g g = gate d = drain s = source isoplus247 (ixfr) e153432 (electrically isolated back surface) features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density ixfr 64n60p isolated back surface
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 64n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , note 1 40 63 s c iss 12 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1150 pf c rss 80 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 23 ns t d(off) r g = 1 ? (external) 79 ns t f 24 ns q g(on) 200 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 70 nc q gd 68 nc r thjc 0.35 c/w r thc 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 64 a i sm repetitive 150 a v sd i f = i s , v gs = 0 v, 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 200 ns q rm v r = 100v 0.6 c i rm 6.0 a notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. test current i t = 32a. isoplus247 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 64n60p fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 01234567 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 02468101214 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) norm alized to i d = 32a vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 64a i d = 32a fig. 5. r ds(on) normalized to i d = 32a vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 20 40 60 80 100 120 140 160 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 30 33 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 64n60p fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.544.555.566.57 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 300v i d = 32a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limit 10ms dc
? 2006 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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